Qualcomm Snapdragon 835

Qualcomm’s next gen flagship – Snapdragon 835 – to be made in partnership with Samsung

Qualcomm  has announced that it will be partnering with Samsung for the manufacture of its next-generation flagship, the Snapdragon 835 processor, which will be made using Samsung’s 10nm FinFET process technology.

Samsung had started making chips based on the 10nm process back in October, thereby making it the first industry player to do so. According to South Korea’s Electronic Times, it was being speculated that Samsung would be the sole contract manufacturer of Qualcomm Inc’s high-end Snapdragon chips using 10-nanometre production technology and the first devices built around it will most likely debut at the next edition of the annual Mobile World Congress trade show in February 2017.

Specifications of new Snapdragon 835

• 10nm process should result in lower power draw per SoC, 
• Deliver up to 27 percent higher performance 
• Draws 40 percent less power compared to the previous-generation 14nm Snapdragon 820 and 821.
• New Quick Charge 4.0 feature support.
• The company suggests that a five-minute charge will be enough to give users 4-5 hours of life and that a typical device's battery could charge up to 50 percent in 15 minutes.
• Real-time thermal management will improve safety, and both voltage and current can be monitored and regulated throughout the charging process to avoid overcharging.
• Samsung’s 10nm process node offers a 30 percent increase in area efficiency and 27 percent higher performance or 40 percent lower power consumption 

Compared to Quick Charge 3.0, Qualcomm projects 20 percent faster charging and 30 percent higher efficiency. Moreover, the standard will be fully compliant with the USB Power Delivery standard and the USB Type-C specification, which should improve interoperability between the devices and chargers shipped by various companies. Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017.

Quick Charge And INOV Battery Technology

Another notable feature for the Snapdragon 835 involves the support for the Quick Charge 4.0 technology. This is Qualcomm's proprietary charging solution that uses the widely touted Intelligent Negotiation for Optimum Voltage (INOV). This technology is capable of accurately identifying the amount of power that the battery can take at specific moments so that the charging process can consistently funnel immense amounts of energy without overheating the battery.

Qualcomm announced that its Quick Charge 4.0 technology will be released in the first half of 2017 and it corroborates the Galaxy S8's expected launch. But this means the 830 would be released later, which does not make sense.